Giant positive magnetoresistance of Bi nanowire arrays in high magnetic fields
Balakirev, F. F.
Boebinger, G. S.
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We have studied the magnetoresistance of electrodeposited Bi wires with diameters between 200 nm and 2 μm in magnetic fields up to B=55 T. In zero field, the resistance increases with decreasing temperature, indicating that the mean free path is strongly influenced by the nanowire geometry. The high-field magnetoresistance shows strong dependence on field orientation; typically 200% for B parallel to the wires, and 600%-800% for B perpendicular to the wires. The perpendicular magnetoresistance is well described by a modified two-current model which suggests that the high-field response of the arrays is fairly insensitive to the wire diameter, and is dominated by bulk properties of Bi.
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